We have developed a combined molecular and atomic layer deposition (M/ALD) of hybrid organic-inorganic chiral thin films. The chirality, thickness, and organic-to inorganic film stoichiometry is controlled at the molecular level.
The resulting chiral thin films may be utilized in a broad range of applications where chirality is needed together with good surface coverage, conformality low roughness and precise control over film thickness.
Furthermore, the M/ALD deposition is compatible with high aspect ratio structures, porous as well as non-porous surfaces making the highly controlled deposition of chiral thin films appealing for numerous applications including chiral separation matrices, catalysis, electro-catalysis, sensing and more.
We demonstrated for the first-time deposition of chiral thin films by M/ALD with atomic and molecular precision. The group was able to use these films for realization of spintronic devices with spin selectivity close to 100% in operating devices.[i] The deposition technique relies on self-limiting surface reactions at the vapor phase compatible with common device processing schemes and enables high frequency operation in memory and logic devices.
The technology is applicable in the areas of the spintronic devices as well as in chemical separations (medicines) and sensing (sensors), catalysis and more.
[i] H. Al-Bustami, S. Khaldi, O. Shoseyov, S. Yochelis, K. Killi, I. Berg, E. Gross, Y. Paltiel,* and R. Yerushalmi*, Atomic and Molecular Layer Deposition of Chiral Thin Films Showing up to 99% Spin Selective Transport Nano Letters 22, 12, 5022–502( 2022). https://doi.org/10.1021/acs.nanolett.2c01953